Method of manufacturing semiconductor structure and semiconductor structure
US12225712B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | May 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
Abstract
The present disclosure provides a method of manufacturing a semiconductor structure, and a semiconductor structure, relating to the technical field of semiconductors. The method of manufacturing a semiconductor structure includes: providing a substrate; forming multiple initial active pillars on the substrate; forming a gate layer between initial active pillars; and forming a first dielectric layer with openings on the gate layer and on the initial active pillars; removing part of the initial active pillar located in each opening to form an active pillar; and removing part of the gate layer to form an isolation trench and a word line, such that two adjacent active pillars in the same row are located on two sides of the isolation trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.