Non-volatile memory device including selection gate and manufacturing method thereof
US12225722B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Dec 23, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/0655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device, includes a source region and a drain region disposed in a channel length direction on a substrate; a flash cell, including a floating gate and a control gate, disposed between the source region and the drain region; a selection gate disposed between the source region and the flash cell; a selection line connecting the selection gate; a word line connecting the control gate; a common source line connected to the source region; and a bit line connected to the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.