Metal plate for producing vapor deposition masks, production method for metal plates, vapor deposition mask, production method for vapor deposition mask, and vapor deposition mask device comprising vapor deposition mask
US12227823B2 · kind B2 · utility
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3References
14Claims
0Family size
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Key dates
| Filing date | Nov 12, 2019 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Feb 4, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A metal plate used for manufacturing a deposition mask has a thickness of equal to or less than 30 μm. An average cross-sectional area of the crystals grains on a cross section of the metal plate is from 0.5 μm2 to 50 μm2. The average cross-sectional area of crystal grains is calculated by analyzing measurement results obtained by an EBSD method, the measuring results being analyzed by an area method under conditions where a portion with a difference in crystal orientation of 5 degrees or more is recognized as a crystal grain boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.