Protocol for the synthesis of bismuth vanadate double-layer homojunction without heteroatoms as photoelectrode
US12227856B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2023 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Feb 24, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D7/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A photoelectrode includes a double-layer homojunction of metal oxide semiconductor films without heteroatoms incorporated. The metal oxide semiconductor films are uniform in large size with rich oxygen vacancies. For BiVO4 films, Bi precursor can be electrodeposited on a substrate under atmospheric pressure and air atmosphere. The electrolytes for electrodeposition are acidic or alkaline with controllable pHs. The electrodeposited substrate is transferred to the muffle furnace for thermal evaporation with V precursor. Film thickness and size can be controlled by electrodeposition parameters. The BiVO4 double-layer homojunction is a safer and cheaper material in photo-driven devices, hydrogen producers, and solar cells, and is an economical replacement of costly III-V compounds, polymers, and valuable fossil. The BiVO4 double-layer homojunction can also be employed as photoelectrodes for H2 production via photoelectrochemical (PEC) water splitting under solar light, which can provide pivotal reactor materials for hydrogen producers and solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.