Continuous replenishment crystal growth
US12227877B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2023 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Jun 23, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/005
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.