Patent · US Active

Selective laser etching of layered fluidistors

US12229340B2 · kind B2 · utility

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9Claims
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Key dates

Filing dateDec 16, 2020
Grant dateFeb 18, 2025
Priority date
Expiry dateDec 20, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2027/0192
  • WIPO fieldMechanical elements
  • WIPO sectorMechanical engineering

Abstract

A method includes separately exposing selected portions of a first rigid substrate and a second rigid substrate to laser radiation, selectively etching the exposed portions of the first rigid substrate and the second rigid substrate using a chemical etchant and bonding the first rigid substrate to the second rigid substrate along a common interface to form a fluidic valve. The fluidic valve may be coupled to a fluidic haptics device, for example, which may be integrated into an artificial reality system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.