Non-volatile memory device having a fuse type memory cell array
US12230337B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Jan 13, 2023 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Apr 23, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes an eFuse cell array in which unit cells of different types are alternately disposed, and each of the unit cells of different types includes a PN diode, a first NMOS transistor, and a fuse, wherein a first type unit cell and a second type unit cell are connected to each other through a common node, and the first type unit cell and the second type unit cell are disposed in a bilaterally symmetrical structure with respect to the common node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.