Dielectric material, device including the same, and method of preparing the dielectric material
US12230444B2 · kind B2 · utility
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26Claims
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Key dates
| Filing date | Jul 6, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | May 11, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/13
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.