Method for manufacturing semiconductor device including air gap
US12230498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2021 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Sep 29, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/36
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes loading a semiconductor substrate into a chamber, the semiconductor substrate including a silicon oxide film, depositing a seed layer on the silicon oxide film by supplying a first silicon source material, supplying a purge gas on the seed layer, depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material layer and subsequently supplying the first silicon source material, and depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.