Substrate processing apparatus including filling gas supply line and substrate processing method using the same
US12230514B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Oct 13, 2021 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | May 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.