Patent · US Active

Semiconductor device and method of manufacturing the same

US12230538B2 · kind B2 · utility

0Cited by
9References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 18, 2020
Grant dateFeb 18, 2025
Priority date—
Expiry dateAug 14, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/27
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CH3 groups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.