Self-passivated nitrogen-polar III-nitride transistor

US12230702B2 · kind B2 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Daniel DENNINGHOFF · Thousand Oaks, US
• Andrea Corrion · Oak Park, US
• Fevzi Arkun · Malibu, US
• Micha Fireman · Malibu, US

Key dates

• Filing date: Dec 22, 2023
• Grant date: Feb 18, 2025
• Expiry date: Dec 22, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A HEMT comprising a channel layer of a first III-Nitride semiconductor material, grown on a N-polar surface of a back barrier layer of a second III-Nitride semiconductor material; the second III-Nitride semiconductor material having a larger band gap than the first III-Nitride semiconductor material, such that a positively charged polarization interface and two-dimensional electron gas is obtained in the channel layer; a passivation, capping layer, of said first III-Nitride semiconductor material, formed on top of and in contact with a first portion of a N-polar surface of said channel layer; a gate trench traversing the passivation, capping layer, and ending at said N-polar surface of said channel layer; and a gate conductor filling said gate trench.