Semiconductor light-emitting device and semiconductor light-emitting component
US12230736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Apr 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.