Flip-chip light-emitting diode and high-voltage flip-chip light-emitting device
US12230738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Sep 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A flip-chip light-emitting diode (LED) includes: a substrate having a patterned surface formed with a protrusion unit including first and second protrusions; a light-emitting epitaxial layer that is disposed on the second protrusions and that includes first and second semiconductor layers and an active layer interposed therebetween; first and second electrodes connected to the first and second semiconductor layers, respectively; and a passivation layer having an epitaxial-covering portion and a substrate-covering portion. The substrate-covering portion of the passivation layer has a top surface with hillocks having a height lower than that of the second protrusions. A high-voltage light-emitting device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.