Light-emitting device and manufacturing method thereof
US12230740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2021 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | May 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.