Active gate driver for wide band gap power semiconductor devices
US12231033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2021 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Oct 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A gate drive circuit of a wide band gap power device (IGBT) includes a buffer, a di/dt sensing network, a turn-on circuit portion and turn-off circuit portion. The buffer, responsive to turn-on, supplies a first current via the first current path to the gate of the IGBT, and responsive to turn-off ceases the supply of the first current. The di/dt sensing network receives a feedback control signal representative of a voltage measurement across a parasitic inductance that exists between a Kelvin emitter and a power emitter of the IGBT. The turn-on circuit portion, responsive to turn-on and a parasitic inductance of zero volts, supplies a second current via a second current path to the gate of the IGBT. The turn-off circuit portion, responsive to turn-off and a parasitic inductance of zero volts, discharges a gate capacitance of the IGBT through both the first current path and a third current path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.