Power semiconductor device and method for manufacturing power semiconductor device
US12232300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2017 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Jun 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes: a plurality of power modules including control terminals; a heat sink, on which the plurality of power modules are mounted; and a control substrate, to which the control terminals are fixed. The plurality of power modules each include a first protruding portion close to the control terminals, and a second protruding portion far from the control terminals. The heat sink has, at a position corresponding to the first protruding portion, a first recessed portion formed to have an inner diameter larger than an outer diameter of the first protruding portion, and engaged with the first protruding portion. At a position corresponding to the second protruding portion, the heat sink has a second recessed portion formed to have the shape of an elongated hole whose minor diameter is larger than an outer diameter of the second protruding portion, and engaged with the second protruding portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.