Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory
US12232330B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 1, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Jun 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A method for manufacturing a semiconductor structure includes the following: providing a substrate; forming an MTJ structure and a first mask structure in sequence on the substrate; performing a patterning process on the first mask structure to form a first pattern extending in a first direction; transferring the first pattern to the MTJ structure; forming a second mask structure on the MTJ structure; performing a patterning process on the second mask structure to form a second pattern extending in a second direction, the first direction intersecting the second direction and being not perpendicular to the second direction; and performing a patterning process on the MTJ structure by utilizing the second pattern to form a cellular MTJ array, the first pattern and the second pattern together forming a cellular pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.