Bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and preparation method and application thereof
US12234193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2020 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jan 15, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/80
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi2WO6 is an orthorhombic system, Bi2S3 is a p-type semiconductor located on a (130) crystal face, MoS2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 μm. The spherical Bi2WO6/Bi2S3/MoS2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.