Method for preparing bismuth oxide nanowire films by heating in upside down position
US12234543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2020 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jan 30, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25B11/091
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing bismuth oxide nanowire films by heating in an upside down position includes: washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position where an electrically conductive surface of the substrate faces downwards; placing a bismuth target, which is adhered to a copper backing plate, on a sputtering head in the magnetron sputtering system; performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.