Layer structure for magnetic memory element, magnetic memory element, magnetic memory device, and method for storing data in magnetic memory element
US12236989B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 12, 2021 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Dec 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a layer structure for a magnetic memory element in which the drive current required for domain wall motion is reduced, and the controllability of domain wall motion is improved, and provides a magnetic memory element having the layer structure. A layer structure (9) for a magnetic memory element (10) comprises multiple first ferromagnetic layers (1) with a switchable spin state and boundary layers (2) each located between each pair of the multiple first ferromagnetic layers (1) to form a domain wall, the boundary layers (2) being for generating ferromagnetic interaction (Aex) between the multiple first ferromagnetic layers (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.