Forming method of plasma resistant oxyfluoride coating layer
US12237153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jan 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3132
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.