Electronic device and manufacturing method and inspection method thereof using transmittance of dielectric
US12237176B2 · kind B2 · utility
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22References
19Claims
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Key dates
| Filing date | May 4, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | May 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a conductive layer, a first dielectric layer, and a second dielectric layer, in which the second dielectric layer is disposed on the first dielectric layer, the conductive layer is disposed between the first dielectric layer and the second dielectric layer, the first dielectric layer has a first transmittance for a light, the second dielectric layer has a second transmittance for the light, and the first transmittance is different from the second transmittance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.