Patent · US Active

Variable width for RF neighboring stacks

US12237327B2 · kind B2 · utility

0Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 10, 2021
Grant dateFeb 25, 2025
Priority date
Expiry dateFeb 19, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/0128

Abstract

Devices and methods to manufacture a stack of FET switches in presence of a neighboring stack of FET switches are described. The stack of FET switches is designed or manufactured so that at least its top FET has a width that is smaller than the width of its bottom FET. Other voltage handling configurations and distributions of widths are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.