Image sensor
US12237353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jun 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.