Semiconductor device including a field effect transistor and a method of fabricating the semiconductor device
US12237391B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Sep 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0142
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes: an active pattern on a substrate, wherein the active pattern includes a plurality of channel layers stacked on one another; a plurality of source/drain patterns spaced apart from each other in a first direction and disposed on the active pattern, wherein the plurality of source/drain patterns are connected to each other through the plurality of channel layers; and first and second gate electrodes at least partially surrounding the channel layers and extending in a second direction, wherein the second direction intersects the first direction, wherein the active pattern has a first sidewall and a second sidewall that faces the first sidewall, and wherein a first distance between the first sidewall of the active pattern and an outer sidewall of the first gate electrode is different from a second distance between the second sidewall of the active pattern and an outer sidewall of the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.