Semiconductor device

US12237409B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Daimotsu Kato · Tokyo, JP
• Yosuke Kajiwara · Yokohama, JP
• Hiroshi Ono · Setagaya, JP
• Aya Shindome · Yokohama, JP
• Akira Mukai · Kawasaki, JP
• Po-Chin Huang · Taipei, TW
• Masahiko Kuraguchi · Yokohama, JP
• Tatsuo Shimizu · Shinagawa, JP

Key dates

• Filing date: Mar 1, 2022
• Grant date: Feb 25, 2025
• Expiry date: Sep 2, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.