Semiconductor device, manufacturing method therefor, and electronic device
US12238918B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2024 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jun 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Provided are a semiconductor device and manufacturing method thereof, and an electronic device. The semiconductor device includes multiple storage cells distributed in a direction perpendicular to a base substrate, the multiple storage cells include multiple transistors and capacitors distributed in different layers and stacked in the direction perpendicular to the base substrate; a word line penetrating different layers and extending in the direction perpendicular to the base substrate; a transistor includes a first source/drain electrode, a second source/drain electrode and a semiconductor layer surrounding a sidewall of the word line; first insulating layers and conductive layers alternately distributed in the direction perpendicular to the base substrate, at least one first hole penetrating the different layers; and the second electrode of the capacitor includes an inner electrode disposed in the first hole on the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.