Silicon carbide body with localized diamond reinforcement
US12240788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2023 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Jan 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68757
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.