Patent · US Active

Semiconductor device, memory system and method of controlling semiconductor device thereof

US12243606B2 · kind B2 · utility

0Cited by

3References

17Claims

0Family size

Assignee

AP MEMORY TECHNOLOGY CORPORATION · TW

Inventors

HSIN-NAN CHUEH · Dashulong, TW
Wenliang Chen · Tianjin, CN
Chin-Hung Liu · Taipei, TW

Key dates

Filing date	Sep 23, 2021
Grant date	Mar 4, 2025
Priority date	—
Expiry date	Jul 29, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device includes a memory die, a non-volatile memory circuit, and a logic die. The memory die includes a first memory space and a second memory space. The non-volatile memory circuit stores a repair table file corresponding to the first memory space. The logic die is coupled to the memory die and the non-volatile memory. The logic die selectively accesses the first memory space or the second memory space of the memory die according a comparing result of an input address and the repair table file. The memory die and is different from the logic die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.