Single ended sense amplifier with current pulse circuit
US12243614B2 · kind B2 · utility
0Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | Oct 17, 2022 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Apr 21, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide memory circuit, a sense amplifier and associated method for reading a resistive state in a memory device. The sense amplifier includes a bit cell configurable to a high or low resistance state; a sensing circuit that detects a voltage drop across the bit cell in response to an applied read current during a read operation and generates a high or low logic output at an output node; and a pulse generation circuit that increases the applied read current with an injected current pulse when a low to high transition of the resistive state of the bit cell is detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.