Semiconductor device structure and methods of forming the same
US12243872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2022 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Mar 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0128
Abstract
A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.