Pixel of a light sensor and method for manufacturing same
US12243895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Jul 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
Abstract
The present disclosure relates to a method for manufacturing a pixel by: depositing an insulating layer on an exposed face of an interconnect structure of an integrated circuit, the interconnect structure having a conductive element flush with said exposed face; etching an opening passing through the insulating layer to the conductive element; depositing an electrode layer on and in contact with the conductive element and the insulating layer; defining an electrode by removing, by etching, part of the electrode layer resting on the insulating layer; and depositing a film configured to convert photons into electron-hole pairs when a ray at an operating wavelength of the pixel reaches the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.