P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D barrier

US12243928B1 · kind B1 · utility

Assignee

• IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY · SA

Inventors

• Ghada A. Khouqeer · Riyadh, SA
• Arihant Raj Siddarth · Dehradun, IN
• Gaurav Jayaswal · Sherpur, IN
• Rahul Sharma · Charlottesville, US
• Yogita Sharma · Riyadh, SA
• Priya Kaushal · Riyadh, SA
• Gargi Khanna · Riyadh, SA
• Tahani A. Alrebdi · Riyadh, SA
• Abdullah Nasser Alodhayb · Riyadh, SA

Key dates

• Filing date: Oct 15, 2024
• Grant date: Mar 4, 2025
• Expiry date: Oct 15, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A bandgap tuneable p-GaN high electron mobility transistor (HEMT) having a structure stacked on a silicon carbide substrate. The device incorporates an indium nitride nucleation layer, followed by an aluminum nitride nucleation layer, and a first aluminum gallium nitride buffer layer. A gallium nitride channel layer is deposited on this stack, with an aluminum source and a drain contact at either end. The bandgap tuneable p-GaN HEMT includes a two-dimensional molybdenum disulfide layer over the channel, covered by a second AlGaN buffer layer. A p-type gallium nitride cap layer and a platinum gate contact complete the structure. This configuration facilitates bandgap tuning and strain engineering, enhancing electron mobility and density in the two-dimensional electron gas region, making it suitable for high-power and high-frequency applications.