Bidirectional device provided with a stack of two high electron mobility transistors connected head-to-tail
US12243937B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 1, 2022 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Apr 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/645
Abstract
The disclosure concerns a device which comprises a stack of two high electron mobility transistors, referred to as first and second transistor, separated by an insulating layer and each provided with a stack of semiconductor layers respectively referred to as first stack and second stack, the first and the second stack each comprising, from the insulating layer to, respectively, a first and a second surface, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first set of electrodes and a second set of electrodes, the first and the second set of electrodes each comprising a source electrode, a drain electrode, and a gate electrode which are arranged so that the first and the second transistor are electrically connected head-to-tail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.