Patent · US Active

Semiconductor device, method of manufacturing the same and electronic device including the same

US12245442B2 · kind B2 · utility

0Cited by

5References

30Claims

0Family size

Assignee

INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Huilong Zhu · Poughkeepsie, US
Guilei Wang · Beijing, CN
Henry H. Radamson · Märsta, SE
Yanbo Zhang · Beijing, CN
Zhengyong Zhu · Beijing, CN

Key dates

Filing date	Jul 31, 2017
Grant date	Mar 4, 2025
Priority date	—
Expiry date	Jul 5, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0172
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A semiconductor device including a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and a gate stack surrounding a periphery of the channel layer. The channel layer includes a semiconductor material causing an increased ON current and/or a reduced OFF current as compared to Si.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.