Member for plasma processing device
US12247296B2 · kind B2 · utility
0Cited by
4References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 17, 2019 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Jul 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/2441
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A member for a plasma processing device includes: an aluminum base material; and an oxide film formed on the aluminum base material and having a porous structure, the oxide film including a first oxide film formed on a surface of the aluminum base material, a second oxide film formed on the first oxide film, and a third oxide film formed on the second oxide film, wherein the first oxide film is harder than the second oxide film and the third oxide film, and a hole formed in each of the first oxide film, the second oxide film and the third oxide film is sealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.