Czochralski single crystal furnace for preparing monocrystalline silicon and method for preparing monocrystalline silicon
US12247313B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 2021 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Mar 24, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are a Czochralski single crystal furnace for preparing monocrystalline silicon and a method for preparing monocrystalline silicon using the same. The Czochralski single crystal furnace is switchable between a first operation state and a second operation state. In response to the Czochralski single crystal furnace being switched between the first operation state and the second operation state, a first heat-preserving barrel moves relative to a second heat-preserving barrel. In response to the Czochralski single crystal furnace being in the first operation state, a side wall of the second heat-preserving barrel covers a first opening so as to isolate a reaction chamber from outside Czochralski single crystal furnace. In response to the Czochralski single crystal furnace being in the second operation state, the second heat-preserving barrel exposes the first opening, so that the reaction chamber is connected to the outside through the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.