Resist material and pattern forming method
US12248249B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Oct 28, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different. R11 represents a hydrogen atom or an alkyl group optionally having a substituent. R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y1 represents a single bond or a linking group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.