Transfer structure and manufacturing method thereof, transfer device and manufacturing method thereof
US12249524B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2020 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | May 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided in the embodiments are a transfer structure and a method thereof, and a transfer device and a manufacturing method thereof. The transfer structure includes: a first electrode, a piezoelectric layer, a second electrode and an adhesive layer stacked on a substrate in sequence, wherein the first electrode and the second electrode are insulated from each other. The transfer structure further includes: a position-limiting layer, wherein the position-limiting layer includes a cavity; the piezoelectric layer and at least part of the adhesive layer are located in the cavity of the position-limiting layer; and in the direction perpendicular to the substrate, the distance between the surface, away from the substrate, of the position-limiting layer and the substrate is greater than the distance between the surface, away from the substrate, of the adhesive layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.