Patent · US Active

Cap structure for interconnect dielectrics and methods of fabrication

US12249577B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Shashi Vyas · Hillsboro, US
Sudipto Naskar · Portland, US
Charles H. Wallace · Portland, US

Key dates

Filing date	Dec 17, 2020
Grant date	Mar 11, 2025
Priority date	—
Expiry date	Apr 23, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76843
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit structure includes a first interconnect level including a first dielectric between a pair of interconnect structures, a second interconnect level above the first interconnect level. The second interconnect level includes a cap structure including a second dielectric on the first dielectric, the cap structure includes a top surface and a sidewall surface and a liner comprising a third dielectric on the top surface and on the sidewall surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.