Image sensor with a device isolation structure enclosing a plurality of pixels including an opening in plan view
US12249615B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2023 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | May 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor includes a substrate having a plurality of unit pixels, a photoelectric device portion and a storage device portion disposed in the substrate and constituting the plurality of unit pixels, a device isolation structure disposed in the substrate and partitioning the plurality of unit pixels, and an overflow gate providing an overflow path between the photoelectric device portion and the storage device portion according to a certain voltage, wherein the device isolation structure is partially opened at a boundary between the photoelectric device portion and the storage device portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.