Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US12249625B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 30, 2021 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Jul 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
Abstract
A silicon carbide semiconductor device has an active region and a termination structure portion disposed outside of the active region. The silicon carbide semiconductor device includes a semiconductor substrate of a second conductivity type, a first semiconductor layer of the second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, a gate insulating film, a gate electrode, a first electrode, and a second electrode. During bipolar operation, a smaller density among an electron density and a hole density of an end of the second semiconductor layer in the termination structure portion is at most 1×1015/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.