Field-effect transistor and method for manufacturing field-effect transistor
US12249633B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Feb 9, 2022 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Jul 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/20
Abstract
A problem to be solved is to reduce a leakage current between the gate and the source. Provided is a trench type FFT, where a thickness Δ1 of an oxide insulating layer O1 that is closer to the inner side than a line extending upward from the outer peripheral side of a nitride insulating layer N is ½ of a thickness d of the nitride insulating layer N or more; and a thickness Δ2 of an oxide insulating layer O3 between the upper end of the nitride insulating layer N and a gate region is ½ of the thickness d of the nitride insulating layer N or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.