Semiconductor device
US12249651B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2022 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Jun 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/27
Abstract
A semiconductor device includes: a channel; a gate structure on the channel; a first source/drain arranged at a first end of the channel and including a metal; a first tunable band-gap layer arranged between the channel and the first source/drain and having a band gap that changes according to stress; a first electrostrictive layer between the gate structure and the first tunable band-gap layer, the first electrostrictive layer having a property of being deformed based on and upon application of an electric field; and a second source/drain at a second end of the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.