Method for manufacturing a semiconductor device and optoelectronic device

US12249672B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Philipp Kreuter · Teublitz, DE
• Andreas Biebersdorf · Regensburg, DE
• Christoph Klemp · Regensburg, DE
• Jens Ebbecke · Rottenburg a. d. Laaber, DE
• Ines Pietzonka · Donaustauf, DE
• Petrus Sundgren · Lappersdorf, DE

Key dates

• Filing date: May 19, 2020
• Grant date: Mar 11, 2025
• Expiry date: Aug 22, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.