Film bulk acoustic resonator chip and package structure with improved power tolerance
US12249975B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 26, 2021 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Nov 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance includes: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.