Merged frame-based and event-bases image sensor pixel
US12250488B2 · kind B2 · utility
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Key dates
| Filing date | Dec 21, 2023 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Dec 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A merged frame-based and event-based image sensor pixel is provided, comprising a reverse-biased photodiode; a frame-based signal readout circuit connected to a cathode of the photodiode; and an event-based signal readout circuit connected to an anode of the photodiode. Light received in the photodiode causes the production of electrons and holes. The recombination current of the holes is continuously measured for producing the event-based signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.