Semiconductor device using different types of through-silicon-vias
US12250807B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Oct 7, 2021 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Dec 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor structure including a semiconductor substrate having an active zone with a channel; a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal; and a keep-out zone located a predetermined distance away from the TSV structure and bounded by the active zone. The TSV structure penetrates the semiconductor substrate. The keep-out zone includes a first element area a first distance away from the power TSV, and a second element area a second distance away from the signal TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.