High refractive index nano-imprint lithography resin
US12253799B2 · kind B2 · utility
0Cited by
4References
20Claims
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Key dates
| Filing date | Jan 24, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Jul 17, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08K2201/011
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A photo nanoimprint lithography (P-NIL) resin is disclosed. The P-NIL resin comprises: a cross-linkable organic binder; solvent based inorganic nanoparticles dispersed in the P-NIL resin; and a solvent configured to be evaporated; the P-NIL resin having a viscosity in the range of 4,000 to 6,000 centipoise at 25° C. after the solvent is evaporated prior to curing the P-NIL resin; and the P-NIL resin having a refractive index of greater than 1.6 at 589 nm and glass transition temperature of greater than 50° C. after curing by a photo initiator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.